Renesas has launched a 650V gallium nitride (GaN) device designed to increase power density in the high-voltage power systems being developed for AI data centres.
The TP65H020G4PLSGBD uses dual-side cooling (DSC) and has an on-resistance of 20 milliohms in an 8mm x 8mm PQFN package. Renesas says the package is 57% smaller than its existing 10mm x 15mm TOLT package.
The device is aimed at 800V direct-current architectures, particularly the intermediate bus converter stage that steps voltage down to 48V, 12V or 6V. It can also be used in battery backup and capacitor bank systems.
The move reflects the increasing power demands of AI data centres. Rack power is moving from around 120kW towards the megawatt range, increasing pressure on both available board space and thermal management.
Unlike top-side-cooled packages, the new device dissipates heat through both sides of the package. Renesas says this reduces top-side thermal impedance by 10%.
The device is based on the company’s Gen IV Plus 650V GaN technology and can be driven using a standard silicon gate driver. Renesas says its low gate charge and output capacitance allow switching at frequencies into the MHz range, potentially reducing the size of passive components.
“Customers building megawatt-scale AI data centres are running out of board space and thermal headroom before they hit their power limits,” said John Wiggenhorn, Senior Product Line Director of High-Voltage GaN at Renesas. “With the industry’s first dual-side-cooled 650V GaN, we cool the device from both sides and cut the footprint significantly, so designers can move more power through the intermediate bus without redrawing the board or adding more cooling hardware.”
Renesas has developed a 6kW 800V-to-48V LLC DC transformer reference design using the new device and an RA6T3 microcontroller. The company reports a power density of 2.6kW/in³ and says full-load efficiency was 0.21 percentage points higher than an equivalent board using its TOLT package.
The company has also developed 800V-to-12V and 800V-to-6V DC/DC intermediate bus converter reference designs based on the same 8mm x 8mm package.
Renesas says the DSC package was developed with AI infrastructure customers and uses an industry-standard PQFN footprint. The company is positioning the device alongside its auxiliary controllers, gate drivers and microcontrollers as a broader power platform for 800V systems.
The device is currently being sampled by AI data centre OEMs and ODMs, with mass production planned for mid-2027.
